Late Stages of Stellar Evolution

A large fraction of ISO observing time was used to study the late stages of stellar evolution. Many molecular and solid state features, including crystalline silicates and the rotational lines of water vapour, were detected for the first time in the spectra of (post-)Asymptotic Giant Branch (AGB) stars. Their analysis has greatly improved our knowledge of stellar atmospheres and circumstellar environments. A surprising number of objects, particularly young planetary nebulae with Wolf-Rayet (WR) central stars, were found to exhibit emission features in their ISO spectra that are characteristic of both oxygen-rich and carbon-rich dust species, while far-IR observations of the PDR around NGC 7027 led to the first detections of the rotational line spectra of CH and CH⁺. Based on observations with ISO, an ESA project with instruments funded by ESA Member States (especially the PI countries: France, Germany, The Netherlands, and the United Kingdom), and with the participation of ISAS and NASA.     

碳纤维湿法缠绕基体配方及成型研究

研究了碳纤维增强复合材料用湿法成型工艺、基体配方的性能和使用期。研究的HTllA、HTllB两种配方浇注体拉伸强度达到100MPa以上。模量为3．9GPa．力学性能优良。配方具有较高的耐热性。使用期大于9h，完全适用于湿法缠绕成型。缠绕的~H50mm碳纤维增强复合材料容器特性系数(Py／Ⅳ)均大于34km．纤维强度转化率(K)达到82％以上。     

炭/炭复合材料防氧化涂层研究进展

介绍了近两年国内外开发的几种C/C复合材料高性能抗氧化涂层的微观结构和高温氧化行为,表明SiC-Al2O3-莫来石、SiC晶须增韧陶瓷、硅酸钇等涂层1500℃静态空气环境下均具有长时间防氧化能力,部分涂层还具有优良的抗热震性能。其中采用原位形成法制备的硅酸钇涂层具有极佳的抗氧化性能,可在1600℃空气中对C/C复合材料有效保护200 h。此外,还介绍了部分涂层的失效机理,并就C/C复合材料抗氧化涂层下一步研究重点提出一些见解。     

糠酮树脂炭及其炭/炭复合材料微观结构与性能研究

通过浸渍/炭化(PIC)工艺制备了糠酮树脂炭块及糠酮树脂基炭/炭复合材料,对其密度分布、力学和热物理性能及微观结构高温演变过程进行了分析研究。结果表明,制备的糠酮树脂炭块及其炭/炭复合材料密度分布较为均匀,其压缩强度分别为33.9、99.4 MPa,室温~1 000℃时平均线膨胀系数分别为3.91×10-6、1.69×10-6K-1;当热处理温度达到2 100℃左右时,Lc值开始大幅度增长,标志着无定形碳向石墨晶体结构转变。在整个热处理过程中,炭/炭材料石墨微晶尺寸增长幅度比纯树脂炭的大,树脂炭块的显微结构为一种高孔隙度的炭结构,但在炭/炭复合材料中树脂炭与纤维之间界面结合良好。     

炭/炭/Al2O3陶瓷基复合材料的制备

通过合理的制备工艺制得一种新型既耐烧蚀又能防热的复合材料－炭／炭／ＡＩ２Ｏ３陶瓷基复合材料。预制件整体发毡先通过热梯度气相沉积ＣＶＤ处理，然后经反复的真空－压力浸清ＡＩ２Ｏ３型无机胶，再通过５００℃烧结制得。得到的材料轴向压缩强度大于６０ＭＰＡ。材料外部导热系数为１．７３０Ｗ／（ｍ＾．Ｋ）（８００℃），内表面线烧蚀率为０．０１２ｍｍ／ｓ。     

碳纤维复合材料高压球形容器研制

采用变带距方法对球形容器进行优化设计，并研制了一批产品。试验结果表明，在纤维设计应力相同条件下，采用变带距缠绕的球形容器，其复合材料重量比等带距缠绕的轻２４．５６％，而其容器特性系数高出１０．４％，能同时满足设计提出的强度和重量两方面要求。     

气体渗碳过程的动态控制

利用气体渗碳物质传递数学模型来仿真计算碳浓度分布，并根据计算结果在计算机上拟合出碳浓度与时间、温度、气氛碳势之间的关系式，此关系式对气体渗碳的动态控制具有指导意义。     

掺磷纳米硅薄膜的微结构

采用喇曼(Raman)散射谱、高分辨率电子显微镜(HRTEM)和原子力显微镜(AFM)对掺磷纳米硅薄膜的微结构进行了分析,并对纳米硅薄膜的传导机制进行了探讨.结果表明:掺磷纳米硅薄膜由尺寸为2～4*#nm的晶粒和2～3个原子层厚的非晶界面构成,计算得到薄膜的晶态比为40%～55%.与本征纳米硅薄膜相比,掺磷纳米硅薄膜晶粒尺寸和晶态比没有明显变化,电导率却提高了2个数量级.随着掺磷浓度增加,纳米硅薄膜的晶粒尺寸、晶态比及电导率逐渐增大.AFM观察表明掺磷纳米硅薄膜由尺寸介于15～20*#nm的团簇构成,团簇排列具有带状特征.     

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morpholo-gies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov (SK) model. ZnSe films were identified by the X-ray diffraction pattern (XRD), the scan-ning electron microscope (SEM), the X-ray photoelectron spectroscope (XPS) and the photoluminescence (PL) techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.     

Study on the Microstructure and Dielectric Properties of Barium Strontium Titanate Thin Films Prepared by Sol-gel Method

Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （BST） thin films. The microstructures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi^3＋ doping ration in BST will lead to decrease of the grain size. It is found that Bi^3＋ doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi^3＋-doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem- perature decreases gradually with the Bi^3＋ contents increasing.